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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. KTA1542T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTC3542T. C L G High-Speed Switching. 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING -30 -30 -5 -3 -5 -600 0.9 150 -55 ) 150 UNIT V V V A mA W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-30V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-1.5A, IB=-30mA IC=-1.5A, IB=-75mA IC=-1.5A, IB=-30mA VCE=-2V, IC=-500mA VCE=-10V, IC=-500mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =-12V 24 OUTPUT MIN. -30 -30 -5 200 - Storage Time tstg Fall Time tf V BE =5V -20IB1=20IB2=IC =-500mA 2001. 6. 29 Revision No : 0 I J MAXIMUM RATING (Ta=25 ) H TSM SH TYP. -155 -105 -0.83 380 25 50 MAX. -0.1 -0.1 -230 -155 -1.2 560 MHz pF UNIT A A V V V mV mV V - 270 - nS - 25 - 1/3 KTA1542T I C - V CE mA h FE - I -10mA -8.0mA C -2.0 COLLECTOR CURRENT I C (A) -1.6 -1.2 1K DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C -30 mA - m 20 -5 0 A VCE =-2V -40mA -6.0mA -4.0mA 100 50 30 -0.8 -2.0mA -0.4 0 0 -200 -400 -600 IB=0mA -800 -1K 10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR-EMITTER VOLTAGE VCE (mV) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.005 -0.003 -0.001 -0.01 C 75 Ta= C 25 Ta= VCE(sat) - I C -10 -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.01 75 C Ta= 25 C Ta= IC /I B =20 IC /I B =50 -25 Ta= C Ta 5 =-2 C -0.03 -0.1 -0.3 -1 -3 -10 -0.03 -0.1 -0.3 -1 -3 -10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -5 -3 IC /I B =50 I C - V BE -4.0 COLLECTOR CURRENT I C (A) -3.5 -3.0 Ta=75 C Ta=2 5C Ta=-25 C VCE =-2V -2.5 -2.0 -1.5 -1.0 -0.5 0 0 -0.2 -0.4 -1 -0.5 -0.3 Ta=-25 C Ta=25 C Ta=75 C -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 29 Revision No : 0 2/3 KTA1542T fT -IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSIION FREQUENCY f T (MHz) 1K 500 300 100 VCE =-10V C ob - V CB f=1MHz 70 50 30 100 50 30 10 10 -1 -3 -5 -10 -30 -10 -30 -100 -300 -1K -3K COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA -10 COLLECTOR POWER DISSIPATION PC (W) COLLECTOR CURRENT I C (A) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 I C MAX.(PULSED) I C MAX (CONTINUOUS) DC Pc - Ta 1m 1.2 MOUNTED ON A 10 S* S 0 * 50 S 0 10 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 10 mS * * OP S* ER AT IO N 0m * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 -0.3-0.5 -1 -3 -5 -10 -30 -50 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 29 Revision No : 0 3/3 |
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